P. Chelvanathan1, Y. Yusoff2, M. I. Hossain1, M. Akhtaruzzaman1, M. M. Alam3, Z. A. AlOthman3, K. Sopian1, N. Amin1,2,3
1Solar Energy Research Institute, The National University of Malaysia, 43600 Bangi, Selangor, Malaysia
2Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, The National University ofMalaysia, 43600 Bangi, Selangor, Malaysia
3Advanced Materials Research Chair, Chemistry Department, College of Sciences, King Saud University, Riyadh 11451, Saudi Arabia
* E-Mail: nowshad@eng.ukm.my
Structural and Optical Property Evolution of RF-SputteredZnS Thin Film
In this study the structural and optical properties evolution of ZnS thin films have been investigated. ZnS thin films were fabricated by RFsputtering method with RF power and operating pressure varied from 50 – 110 W and 7 – 17 mTorr respectively. The deposited ZnS films thenwere characterized by Scanning Electron Microscopy (SEM), X-Ray Diffractometer (XRD), Atomic Force Microscopy (AFM) and Hallmeasurement equipment to elucidate the structural and optical.
It can be clearly observed that for higher operating pressure of 17 mTorr and 13 mTorr which correspond to sample B-ZnS and D1, the natureof the crystal structures are amorphous as the XRD readings did not indicate any clear distinct peak(s). However, as the working pressure isdecreased below 10 mTorr as for sample D2 and D3, a distinct peak is observed which is centred at 28. 64 º which correspond to cubic phasecrystals with (111) plane The cubic phase of (111) plane has an increasing peak centred at 28.5º as the RF in increased from 70 W to 110 W. Atthe same time, cubic phase of (220) plane is formed for film deposited at 110 W, but the relatively insignificant when compared to the (111)plane which is the dominant.
Major Findings and Discussions
Conclusion : Optimum Deposition Parameter of ZnS
Experimental & Characterization Procedures
Surface morphology probed by Scanning Electron Microscope
Surface morphology probed by Scanning Electron Microscope
XRD patterns with various annealing temperature
XRD patterns with various annealing temperature
Substrate Cleaning
Process
• Methanol, acetone,methanol, DI watersonification for 15minutes in eachsolvent
Substrate Cleaning
Process
• Methanol, acetone,methanol, DI watersonification for 15minutes in eachsolvent
RF-Sputtered ZnS Film
• Base pressure = 10-4 Torr
• Argon Flow = 7-17 SCCM
• DC Power = 50-110 W
• Sub. Rotation = 10 RPM
• Sub. Temperature = RT
• Deposition Time = 80 min.
• Mo Thickness = 500 nm
RF-Sputtered ZnS Film
• Base pressure = 10-4 Torr
• Argon Flow = 7-17 SCCM
• DC Power = 50-110 W
• Sub. Rotation = 10 RPM
• Sub. Temperature = RT
• Deposition Time = 80 min.
• Mo Thickness = 500 nm
CharacterizationMethods
• XRD
•FESEM
•UV-ViS
• AFM
CharacterizationMethods
• XRD
•FESEM
•UV-ViS
• AFM
Band gap (a) Operating time variation (b) RF power variation
Band gap (a) Operating time variation (b) RF power variation
RMS Surface Roughness (a) Operating time variation (b) RF powervariation
RMS Surface Roughness (a) Operating time variation (b) RF powervariation