Quantum Tunneling Through a Thin Potential Barrier
Total Reflection at Boundary
Frustrated Total Reflection (Tunneling)
KEY TAKEAWAYS
Region1
Region2
CASE II : Eo < V
A Simple Potential Step
CASE I : Eo > V
Region1
Region2
TOTAL REFLECTION
PARTIAL REFLECTION
CASE II : Eo < V
Region 1
Region 2
Region 3
In Regions 1 and 3:
In Region 2:
A RectangularPotential Step
for Eo < V :
A RectangularPotential Step
for Eo < V :
Flash Memory
Erased
“1”
StoredElectrons
Programmed
“0”
InsulatingDielectric
SOURCE
FLOATING GATE
CONTROL GATE
CHANNEL
Tunnel Oxide
Substrate
Channel
FloatingGate
Electrons tunnel preferentially when a voltage is applied
DRAIN
Image is in the public domain
MOSFET: Transistor in a Nutshell
Tunneling causes thin insulating layersto become leaky !
Conducting Channel
Image is in the public domain
Conduction electron flow
Control Gate
Semiconductor
Image courtesy of J. Hoyt Group, EECS, MIT.
Photo by L. Gomez
Image courtesy of J. Hoyt Group, EECS, MIT.
Photo by L. Gomez
CONTROL GATE
FLOATING GATE
SILICON
CONTROL GATE
FLOATING GATE
UNPROGRAMMED
PROGRAMMED
To obtain the same channel charge, the programmed gate needs ahigher control-gate voltage than the unprogrammed gate
Reading Flash Memory
How do we WRITE Flash Memory ?
0
L
V0
x
Eo
metal
metal
air
gap
Question: What will T be if we double the width of the gap?
Example: Barrier Tunneling
•Let’s consider a tunneling problem:
An electron with a total energy of Eo= 6 eVapproaches a potential barrier with a height ofV0 = 12 eV. If the width of the barrier isL = 0.18 nm, what is the probability that theelectron will tunnel through the barrier?
Consider a particle tunneling through a barrier:
1. Which of the following will increase the
likelihood of tunneling?
a. decrease the height of the barrier
b. decrease the width of the barrier
c. decrease the mass of the particle
2. What is the energy of the particles that have successfully “escaped”?
a. < initial energy
b. = initial energy
c. > initial energy
Multiple Choice Questions
0
L
V
x
Eo
Although the amplitude of the wave is smaller after the barrier, noenergy is lost in the tunneling process
Application of Tunneling:Scanning Tunneling Microscopy (STM)
Due to the quantum effect of “barrier penetration,” theelectron density of a material extends beyond its surface:
material
STM tip
~ 1 nm
One can exploit thisto measure theelectron density on amaterial’s surface: